Simulations of GaAs Photoconductive Switch by Using Improved Carrier Velocity Formula under Ultra-high Electric Field

GaAs is an important semiconductor for manufacturing photoconductive switches. The carrier velocity formula of GaAs in literature were shown obviously deviating from the experimental data under ultra-high electric field. The parameters of the electron velocity formula were re-optimized, and a new velocity formula for holes was proposed. The new formula agrees well with the experimental data in a wide range of electric field intensity. The simulated J-V curves under dark condition from new velocity formula are obviously deviated from the original one. The difference of transient response curves between two sets of carrier velocity formula is very prominent under strong light and high bias voltage.