Microwave and Millimeter Wave Rectennas with Gated Anode Diode and Diode on Antenna Topologies

This paper presents rectenna topologies that are diode on antenna (DoA) for highly-efficient rectification and gated anode diode (GAD) for high-power one. First of all, DoA topology with a high-impedance dipole antenna including all of RF circuit functionalities is discussed for highly efficient rectification in 5.8 GHz band. The rectifier diodes are directly connected to the antennas without lossy circuit components. In the next discussion, for high-power operation in 5.8 GHz band, a gated anode diode (GAD) configured with gate-drain connected GaAs E-pHEMT is demonstrated for the rectifier instead of GaAs SBD. Finally, DoA topology with a wire-loop antenna is demonstrated for highly efficient rectification in 28 GHz band. In addition, the antenna configuration realizes high radiation gain with the wire and inductive impedance for DoA topology with the loop. It eliminates circuit loss which is more serious in the millimeter wave band.