Pressure effect on the Structural and opto-electronic properties of Pb2ScSbO6 double Perovskite

In the current paper, the impact of pressure on the physical optoelectronic properties of Double perovskite $\mathbf{P b}_{2} \mathbf{S c S b O}_{6}$ was investigated. Results predicted that the $\mathrm{Pb}_{2} \mathbf{S c S b O}_{6}$ present a semi-conductor aspect with a 3.287 eV band gap. The optical coefficients including reflectivity and absorption were calculated for various photon energy to get more information about the optical response of the studied elements. Whish demonstrates a strong absorption in the ultraviolet and infrared eras, this suggests the potential integration of Pb
2
ScSbO
6
Double perovskite in the optoelectronic applications.