Quantum physics-based analytical model for analysing planar ohmic contacts

Conventional analytical models for examining Metal-Semiconductor (M-S) ohmic contacts in test structures have centered around resistive-only contact interfaces. However, this approach could lead to misinterpretation, as M-S contacts are governed by the quantum physics effect of electron tunneling across the potential energy barrier at the M-S interface. This paper describes a novel resistor-to-Schottky (RSB) barrier analytical model, aiming to bridge the gap between conventional analytical approaches and the underlying physics of M-S ohmic contacts. The proposed model undergoes validation and analysis using the semiconductor device simulator tool TCAD. This study confirms the validity of the RSB model as the electrical voltage and current density profiles agree well with their counterparts extracted from the TCAD model. The investigation also highlights the differences between the proposed RSB model and the resistoronly analytical TLM expressions for contacts under different working conditions. This research contributes to a more comprehensive understanding of Metal-Semiconductor ohmic contacts, offering insights that could impact the design and interpretation of related semiconductor devices.