Amorphous Oxide Semiconductor TFTs Toward Memory Application

Amorphous oxide semiconductor (AOS) thin film transistors represented by IGZO are widely used as the backplane to drive FPD pixels. Recent research interest of oxide-TFTs is directing to memory application based on very low leakage current in the off-state. This leaf presents our recent research on a-IGZO-TFTs toward this application, i.e., reduction of contact resistance in complex architecture utilizing unique properties of metal Pd, and finding of a reverse relation between donor centration and donor activation energy in very thin channel layers.