Enabling High Performance and Strain Insensitivity in Intrinsically Stretchable Large-Area Carbon-Nanotube Thin-Film Transistors

We highlight recent progress in intrinsically stretchable large-area electronics (LAE), specifically thin-film transistors (TFTs). By combining innovations in materials and microfabrication techniques, we have scaled down the channel length to sub-10 µm, while maintaining a field-effect mobility of 13 cm
²
/V·s. This enhancement brings stretchable TFTs from kilo-Hertz to mega-Hertz domain, rivaling that of flexible TFTs. Our stretchable TFTs exhibit excellent fabrication yield and mechanical robustness. Furthermore, to mitigate the strain effects, we design a circular TFT that can significantly reduce strain-induced current change from over 50% to only a few percent.