Implication of Active Semiconducting Layer Thickness on the Performance of Organic Schottky Diodes

Metal/semiconductor interface plays a dominant role in controlling the performance of organic electronic devices. The thin films of RR-P3HT with varying thicknesses fabricated by spin-coating were utilized to investigate the optoelectronic characteristics of organic Schottky diodes (OSDs). The OSD was fabricated in the Glass/Au/P3HT/AlOx/Al sandwich device architecture. The increase in thickness ofRR-P3HT led to a decrease in the molecular ordering of the fabricated thin films as confirmed by electronic absorption spectroscopy. At the same time, OSDs fabricated using thin films with varying thicknesses from 50 nm-500 nm led to a decrease in both the ideality factor from 2.6 - 4.3 and rectification ratio from 10
⁵
-10
³
, while there was an increase in the breakdown voltage from 25 V -110 V.