Benefits of Combining Gate-Field Plates Design and Hybrid Drains on Gold-Free GaN HEMT Devices

In this study, the high electron mobility transistors were fabricated by etching the P-type gallium nitride with a high selectivity inductively coupled plasma (Inductively Coupled Plasma ICP). In isolating the components, the component area was defined by using ionic doping to destroy the crystal lattice. A double-layer photoresist structure was developed to make the lift-off process easier to strip the metal without damaging the gate, and the ohmic metal was made using gold-free metal to reduce the cost.