TFT Characteristics of High Mobility Poly-Crystalline Oxide

We have successfully developed stable poly-crystalline oxide semiconductor (Poly-OS) as a channel of TFT on Gen.6 glass substrate. This technology has improved the mobility and stability of transistor, therefore achieved both extreme low off-state current and high on-state current as equal to LTPS TFT. In this paper, we introduce the electrical property of Poly-OS.