A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo-sensitive Organic Insulation Films

In this work, the method of patterning inter-layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO
2
with an organic film Poly-imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low- temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half-tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo-sensitive organic insulation films.