Impact of the Interior Dielectric Constant on the Performance of CNTFET 10 nm

In this work, we analyze the impact of the interior low dielectric constant material inside the Carbon Nanotube on the performance of CNTFET 10 nm and their impact on the leakage current. Our results show that the use of the low interior dielectric constant on the CNTFET structure can minimize the leakage current by 13.6% and therefore improves the performance ratio so as to have a good performance of CMOS circuits.