Eliminating the Negative Impact of the dU/dt Effect on Switching Processes in Drivers with Capacitive Galvanic Isolation

This article discusses the problem of noise immunity of drivers with capacitive galvanic isolation, which are currently considered the most promising among other types of drivers for use in devices that meet special operating conditions. However, this problem is also relevant in the development of other types of control devices. The article proposes two methods for eliminating the negative effects of the dU/dt phenomenon (voltage change over time) in the processes of switching drivers with capacitive galvanic isolation used to control high-voltage semiconductor devices such as power metaloxide-semiconductor field-effect transistors (MOSFETs) and isolated gate bipolar transistors (IGBTs). One of these methods is described in detail and the results of computer modeling demonstrating its effectiveness are presented. These results confirm that the proposed approach to circuit design is effective in eliminating the negative effects of the dU/dt effect and can be used in practice to increase the noise immunity of the device.