Integrated Circuit High-Voltage and Precision Operational Amplifier Using 180 nm BCD Technology

This paper is devoted to the development of a high-voltage precision operational amplifier with two voltage gain stages and output stage in the form of complementary source followers. To provide stability, the circuit implements compensation capacitor and nulling resistor. The parameters were simulation at five corners and at high, low and 27 -degree temperature. The DC gain of the Op Amp is 160 dB. The gain bandwidth is 7.95 MHz with a phase margin of 130 degrees and the output voltage slew rate is $15.7 \mathrm{~V} / \mu \mathrm{s}$. The quiescent current was 6.65 mA. The offset voltage parameter was estimated by the Monte Carlo method with the number of runs 100. The offset value was $300 \mu \mathrm{V}$. It was designed using 180 nm BCD (Bipolar, CMOS, DMOS) technology. The topology was developed with axial symmetry its size was $2.11 \times 2.41 \mathrm{~mm}^{2}$ using 180 nm BCD technology. The supply voltage is $\pm(5-16.5) \mathrm{V}$.