Sub-terahertz Si CMOS Based Emitters and Detectors

This paper presents compact CMOS-based electronic sources and detectors designed for the sub-terahertz frequency range. We illustrate that achievable noise-equivalent power levels, in the range of a few tens of
$\text{pW}/\sqrt{}\text{Hz}$
, along with emitted power reaching up to 100
$\mu \mathrm{W}$
‘, enable the construction of effective quasi-optical emitter-detector pairs operating within the 200 - 266 GHz range. Additionally, the input power-related signal-to-noise ratio can reach up to 70 dB for a one Hz equivalent noise bandwidth. We showcase the versatility of these compact devices across various applications, including imaging, spectroscopy, and wireless communication links.