Thermal Performance Of Cold Plate Cooling Of Sic Power Transistor In TO 247 Package

This article deals with the thermal performance of the single silicon carbide MOSFET in the TO-247-4 package, mounted on the heat sink designed for natural convection. The article introduces the theory behind the heat dissipation of observed semiconductor structures. It describes the importance of thermal analysis in electronic design and provides the layout for the further development of future work. In the practical section of this article, the thermal analysis is realized by two methods, through the simulation in the simulation software, COMSOL Multiphysics and experimental measurement. Both methods are described and analyzed separately. At the end of the article, both methods are compared and resumed in the conclusion. The aim of this article is to show the reliability of advanced simulation software for the analysis of the thermal performance of a semiconductor device if the accurate model is created and the conditions are set appropriately.