GSE and GWE Techniques to improve ON (IoN) current and Ambipolar conduction of Tunnel FET(TFET) device

Abstract-Metal oxide semiconductor field effect transistor (MOSFET) devices are in high demand due to their adaptability. These MOS transistors scale down to make next generation technology for high speed and low power. However, shot channel effects and the minimal subthreshold swing (SS>60 mV/Dec) restrict MOSFET growth. Tunnel FETs (TFETs) are a promising alternative to MOSFETs owing to their improved subthreshold properties (SS<60 mV/Dec) and band-to-band tunnelling (BTBT) charge carrier transfer. The SCE is eliminated by the TFET technology, allowing industry-required precise scaling. Low ON(ION) current and ambipolar conduction make TFET performance chaotic. Thus, researcher suggested gate structural engineering (GSE) and gate work function engineering (GWE) as the best ways to solve these issues and improve TFET. This work performs the analytica analysis on different devices reported on these two approaches using TFET specifications. A comprehensive examination shows how these strategies increase the device’s on (Ion) current and reduce its ambipolar current.