Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall (QSH) insulators are considered advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This article presents a device modeling based on the tight-binding (TB) model and the nonequilibrium Green’s function (NEGF) formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.