Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga Doping

We present a strategy to reduce the high free electron concentrations in continuous liquid metal printed (CLMP) indium oxide (InO x ) thin films by doping with Ga to achieve improved off-state behavior at a low, flexible substrate-compatible processing temperature of 180 °C. By trace doping of the precursor metal alloy with Ga, we produce CLMP indium gallium oxide (IGO) with varying Ga concentrations to achieve IGO TFTs with near-zero V on and ~5X improved subthreshold slope (SS) compared to pure InO x devices. IGO devices also exhibit enhanced bias stress stability, highlighting their potential application in next-generation flexible display technologies.