Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors

Two-dimensional (2D) semiconductor devices are attractive for future electronics, but face reliability challenges due to electrically-active defects in the gate insulator or at the insulator-semiconductor interface [1 , 2] . A few previous efforts have attempted to quantify and explain the physical origins and contributions of defects to 2D transistor device behavior [3 , 4] , or focus on the dynamic processes behind charge capture and emission, and their influence on subthreshold transport in 2D transistors [5] . However, defect characterization techniques for 2D semiconductors remain underexplored. Here, for the first time, we utilize time-dependent charge pumping-like measurements to characterize defect-mediated electron trapping in monolayer (1L) WS 2 transistors.