Fabrication of Hybrid Fin/Planar LDMOS with Modulation Gate

After the 22 nm technology node, the transistor structure changed from a traditional planar to a non-planar one, and the multi-gate transistor structure has emerged to improve the static electricity of the device [1] . The fins channel can help enhance the current drivability, but FinFET-based lateral double-diffused MOSFET (LDMOS) platforms exhibit a degraded performance due to high resistances in the fin-type drift region [2] . We have demonstrated a hybrid fin/planar LDMOS design (hybrid FET) in the past [3] . In this study, we further add a modulation gate on the LDD site to fix the drift region and ensure that the drift region is not affected by process offsets.