Low-Temperature Fabrication of Mesoporous SiO2 CBRAM Memory Cells on Flexible Substrates

Conductive Bridge Random Access Memories (CBRAMs) are promising candidates for memory applications on flexible substrates. In this study, mesoporous SiO
2
CBRAM memory cells were fabricated using a low-temperature process as low as 120°C, compatible with a variety of flexible substrates. We illustrate the non-volatile characteristics of the cells, which exhibit low switching voltages, a substantial ratio of 10
⁴
between high and low resistance states, and satisfactory bipolar switching behavior, enduring over 10
³
write-read-erase-read cycles. These results open the route to fabricate simple and low-cost crossbar memory arrays on flexible substrates by combining sol-gel and inkjet-printing processes.