Optical Neuromorphic modulators based on Tamm Plasmon Resonators with PEDOT:PSS

Reconfigurable optical devices are increasingly recognized for their potential in enhancing high-density optical interconnects, photonic switching, and memory systems. While various optical modulators utilizing active materials have been successfully developed, achieving high modulation depth with low operating voltage in the near-infrared (NIR) spectrum remains a significant challenge. This spectrum is particularly important for free-space communication and imaging technologies. In this context, an electrically switchable device employing Tamm plasmon coupled with poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) has been introduced. This innovative approach enables substantial modulation depth throughout the NIR spectrum, effectively absorbing incident light even under epsilon near zero conditions. The device boasts an impressive optical modulation efficiency of over 88% at a CMOS-compatible voltage of ±1 V, achieved through meticulous electrical manipulation of charge carrier density via an electrochemical doping/dedoping process. Moreover, this device opens new avenues for creating non-volatile optical memory storage solutions, exhibiting rewritable multi-memory states and demonstrating long-term potentiation/depression capabilities, akin to neuromorphic behavior.