HEMT As a Potential Contender For 5th Generation Communication Technology

The high electron mobility transistor (HEMT) inherits high electron mobility as well as wider energy bandgap and is a suitable candidate for high-frequency operation. These interesting properties make them well-suited for 5
^th
generation technology. The essential requirements of 5G technology are fulfilled by HEMTs including high-speed, lower delay, and good connectivity. HEMTs are utilized to design high-frequency amplifiers in the frequency range from 30 GHz to 300 GHz required for 5G communication. HEMTs are suitable for use in low-noise amplifiers required for 5G transceivers. The signal distortion is reduced due to the use of HEMTs caused by their low noise figure