Deciphering Phenomenal Performance with Gate-All-Around Strained Heterostructure Nanotube Tunneling FET (TFET) for better Drive Currents and Steep Subthreshold Slope

Tunnel Field-Effect Transistors (TFETs) encounter hurdles in achieving a formidable subthreshold slope, securing high ON currents, and addressing ambipolar behavior. Our manuscript showcased a flourishing Gate-All-Around Strained Heterostructure Nanotube Tunneling FET, displaying exceptional drive currents with faster switching speed. This accomplishment is credited to the small bandgap of strained SiGe/Si and the electrostatics of the Gate All Around structure, resulting in a remarkable drive current of 400uA/um and a subthreshold slope of approximately 55.1 mV/dec. Tackling and investigating TFET scalability, the strained model is developed incorporating a Quantum transport model, Non-local BTBT, comprehensive Band structure information (both real and complex), and all transitions, encompassing direct and phonon-assisted processes. Using Silvaco Atlas, we explored the Gate All Around SiGe/Si Nanotube Tunnel FET on UT-SOI (Ultra-Thin) substrate with a focus on their capability to mitigate ambipolar behavior while achieving high ON currents and low OFF currents.