Research on Static Characteristics of SiC Power MOSFETs for Switching Power Supply Based on Experimental Data Analysis

SiC power MOSFETs are becoming increasingly widely used due to their superior performance, and their reliability is crucial for critical equipment such as power supplies. However, there are still unresolved issues that need to be addressed. Therefore, an experimental study was carried out to investigate the variation of static characteristics of SiC MOSFETs in reliability tests. Based on experimental data, the degradation trend of key parameters such as on resistance and threshold voltage of SIC MOSFET was summarized. The mechanism of temperature stress on parameters was analyzed, and strategies to cope with parameter drift were proposed, providing reference for promoting the more mature application of SiC MOSFET.