Simulation Study On 4.5kV FRD Failure Induced By Neutron Irradiation

This article utilizes Sentaurus TCAD software to simulate and analyze neutron-induced Single Event Burnout (SEB) of a 4500V Fast Recovery Diode (FRD) with a silicon-based PIN structure. Initially, the diode structure is modeled to accurately represent the device’s electrical characteristics. The resultant SEB simulation reveals a significant generation of electron-hole pairs near the trajectory of high-energy particles, leading to increased electron density and localized device temperature rise. Through manipulation of biased device parameters, it is determined that the doping concentration and width of the buffer layer significantly influence the SEB occurrence in the device. Furthermore, the observation of electric field distribution during SEB serves to validate the diode burnout mechanism.