Laboratory Verification of Simulation Studies of Bipolar Transistor

A precise knowledge of the output parameters of a semiconductor element (transistor) is particularly important in its optimal choice for a specific application. In the last decade, the classical characterization using a laboratory setup has received an effective alternative with dedicated compact measuring instruments. The paper presents a simulated study of a powerful bipolar transistor using a tester. Its results are compared and verified by the classic laboratory method with a bench.