A 124–144 GHz Rectifier Achieving 22% RF-to-DC Conversion Efficiency in 22 nm FD-SOI CMOS Technology

This paper presents a high-efficiency D-band rectifier for 6G energy harvesting applications. We introduce and verify a systematic design methodology for switching rectifiers, and then use it to realize two prototypes in 22nm FD-SOI CMOS technology. By leveraging the back-gate biasing, a 5% enhancement in the power conversion efficiency (PCE) is demonstrated. The achieved peak PCE is 22% at 132 GHz with an input power of 7 dBm. It maintains its performance over a wide frequency range of more than 20 GHz. With a size of 0.0826 mm
²
, the realized rectifier compares favorably to other state-of-the-art mm-wave rectifiers.