An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications

We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potential by fabricating HBTs based on the InGaP/GaAsSb/InGaAs material system monolithically integrated on 300 mm Si substrate by varying the In and Sb content in the corresponding device layers while achieving a very low threading dislocation density (TDD)
$(< 5\times 10^{6}\text{cm}^{-2})$
. An HBT device stack, grown lattice-matched to fully relaxed Ino.3Ga0.3.7 3Ga0.7As nano-ridges on trench-patterned Si, shows> 50x improvement in the collector current density as compared to our InGaP/GaAs HBTs without impacting the interface quality of underlying hetero-interfaces as indicated by the ideality factors of the base (~1.8) and collector (~1) currents, respectively.
$f_{\mathrm{t}}$
and
$f_{\max}$
of 36 GHz and 13.7 GHz, respectively, are reported for an emitter width of
$5 \mu\mathrm{m}$
.