A 180-GHz High-Sensitivity Dielectric Resonator Antenna-Coupled Detector in 16nm FinFET

In this work, we present a 180-GHz dielectric resonator antenna-coupled power detector with 16nm FinFET technology. The detector leverages the non-linearity of the transistor to detect the envelope of an incoming signal at the frequency of interest. A dielectric resonator antenna (DRA) using high-resistivity silicon is utilized for higher radiation efficiency and design flexibility. It is mounted on top of the chip and the received energy is coupled to the detector through a slot. The antenna is optimized with a simulated efficiency of 45%, and the detector achieves a maximum responsivity of 178.1kV/W and a minimum NEP of
$3.36\text{pW}/\sqrt{Hz}$
.