A 278-348 GHz 6th Harmonic Injection Locking Frequency Multiplier based on 3rd Harmonic Injection Locking Oscillator in 130 nm SiGe Process

This paper presents a 3
^rd
ILO and a 6
^th
ILFM fabricated in 130-nm SiGe BiCMOS technology. A hybrid-Colpitts model has been proposed to improve the conventional model of the Colpitts oscillator above 100 GHz. The 3
^rd
ILO can be locked from 285 GHz to 345 GHz and the 6
^th
ILFM can be locked from 278 GHz to 348 GHz. The maximum output power of the 3
^rd
ILO is 1.1 dBm at 285 GHz with a peak DC-RF efficiency of 1.92% and the maximum output power of the 6
^th
ILFM is 1.33 dBm at 288 GHz with a peak DC-RF efficiency of 1.5%. The 3-dB BW of the 6th ILFM is from 278 to 333 GHz. To the best knowledge of the authors, the measured locking range of 70GHz (22.3%) and the 3-dB BW of 55 GHz (18%) are the widest for the reported injection locking signal sources above 100 GHz.