A 45 nm RFSOI CMOS-based 24.25-29.5 GHz 2×16-Channel Phased-Array Transceiver IC for 5G NR Applications

This paper presents a broadband 2×16-channel phase-array transceiver IC based on a 45-nm radio frequency silicon-on-insulator CMOS device technology for fifth-generation millimeter-wave frequency band (n257, n258, and n261) applications. The transceiver IC that mainly consists of compact single-transformer based Doherty power amplifiers with frequency-shift capabilities to support wideband operation and low-noise amplifiers shows an outstanding RF performance, occupying the small die area/Ch. of 1.87 mm
²
. When operating in transmitter path, it shows great average power of > 11.0 dBm/Ch. at error vector magnitude of -25 dB, consuming low DC power of < 155 mW/Ch. It also shows remarkable system noise figure of 3.2 – 3.7 dB with low DC power consumption of < 48.8 mW/Ch. in receiver path.