A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE6dBPBO Enhancement and 3:1 VSWR Resiliency

This paper presents a broadband 5G power amplifier robust to VSWR variations and featuring high efficiency up to deep power back-off in 28nm FD-SOI CMOS technology. The proposed architecture, based on a quasi-balanced structure and an inductive load, offers an alternative to the conventional Doherty PA to maintain its PAE
6dBPBO
enhancement up to 3:1 VSWR over a wide bandwidth. Indeed, the degradation of its PAE
6dBPBO
is kept below 7% between 22 and 44 GHz. The circuit achieves 24% PAE
6dBPBO
and 16% PAE
9.7dBPBO
at 28 GHz, while guaranteeing linearity in line with the 5G standard. The PA occupies a surface area of 0.82 mm
²
.