A 5G FR2 n260/n259 Phased-Array Transmitter Front-End IC in 28-nm CMOS FD-SOI with 3-Stack Power Amplifier Employing OPA-Based Bias Scheme and Cross-Tied Inductor Topology

This paper presents a 16-element 5G FR2 n260/n259 phased-array transmitter front-end integrated circuit implemented in a 28-nm CMOS fully depleted silicon on insulator device technology. A differential 3-stack configuration, an operational amplifier-based bias scheme, and a cross-tied inductor topology are employed in the power amplifier for high output power, stability, and reliability. The developed transmitter achieves out-put power of >14.2/9.4 dBm/element at an error-vector-magnitude of 5.6% (DFT-s OFDM 64QAM) with transmitter efficiency of >10/4.8%/element for n260/n259 bands.