CuInSe/sub 2/ films prepared by screen-printing and sintering method

The production of polycrystalline CuInSe/sub 2/ films by the screen-printing and sintering method is presented. To prepare fine powder for the screen-printing CuInSe/sub 2/ paste, pure Cu, In, and Se powders were mixed and ground in an agate ball mill with distilled water or ethylene glycol monophenyl ether to a grain size of around 1.5 mu m. It was found that CuInSe/sub 2/ is formed during the grinding process at room temperature, and its quantity increases proportionally to grinding time. The CuInSe/sub 2/ film is p-type with a resistivity of 1.1 Omega cm, Hall mobility of 1.0 cm/sup 2//Vs, and carrier concentration of 6.4*10/sup 18/ cm/sup -3/, and the optical bandgap is 1.0 eV. Photovoltaic effect was observed in a CdS/CuInSe/sub 2/ heterojunction fabricated by depositing CdS film on the sintered CuInSe/sub 2/ by RF sputtering.<
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