Design and Fabrication of a MEMS Temperature and Pressure Integrated Sensor With Back-Inlet Package Structure

Sensor research is currently focused on integration, downsizing, and lightweightness to satisfy the demands of high-end equipment for intelligence, so we design a micro-electro-mechanical system (MEMS) integrated sensor. This article describes the design of a MEMS temperature and pressure integrated sensor with back-inlet packaging. Glass slurry sintered back-inlet packaging is used to increase the sensor’s dielectric compatibility and connection strength. The ideal size is established after simulating and optimizing the chip’s major dimensions. Processes including laser welding, sintering, and MEMS fabrication technology finish the packing and preparation of the sensor chip. The encapsulated structure can withstand a 30 MPa pressure test. Finally, the pressure unit exhibits a sensitivity and sensitivity drift of 5.536 mV/MPa and -0.1900%FS in the range of 0–15 MPa and -40 °C–120 °C, respectively. The linearity, hysteresis, repeatability, basic error, accuracy, and zero-time drift are 0.2094%FS, 0.1987%FS, 0.1885%FS, ±0.4507%FS, 0.3244%FS, and 0.1985%FS, respectively, and the measurement error of the temperature unit is less than
$\pm 0.61~^{\circ }$
C.