High-Performance TiN/TaOx/TiN Selectors With Short-Term Memory Characteristics

We present TiN/TaOx/TiN device structure showing varistor and short-term memory (STM) characteristics that could be useful for selector applications and temporal processing in one-selector one-RRAM (1S1R) architectures. The devices show high selectivity (
$10^{{3}}$
) and excellent endurance (one million cycles) and can sustain high-voltage stress (
$10^{{3}}$
s). The varistor behavior persists with device scaling down to
$2.25~\mu $
m2 and thickness as thin as 2 nm. Moreover, the device exhibits a volatile switching behavior under pulse programming that could offer an additional analog output from single-digital input feed into the integrated 1S1R arrays.