Vibration may Break the Conductive Filament in amorphous Germanium based Memristor

In this work, we present a memristor that utilises amorphous Germanium as its middle layer. This memristor exhibits a different bipolar switching behaviour, which is inverse to that of the typical electrical chemical metallization memristor. Additionally, we discovered that this memristor is sensitive to external vibrations, causing it to switch from a low resistance state to ultra-high resistance state. Our hypothesis is that the conductive filament passing through the amorphous Germanium is disrupted due to the vibrations.