Evaluating Modulation Techniques in a Hybrid T-Type Power Converter based on GaN and SiC Semiconductors for Electric Transport

Gallium nitride (GaN) and silicon carbide (SiC) semiconductors can improve the power converters used in electric vehicles. These devices offer significant advantages due to their ability to operate at high switching frequencies while maintaining high efficiency. This paper presents a comprehensive comparison of modulation techniques for hybrid T-type converters that use SiC and GaN semiconductors. The analysis compares modified sinusoidal pulse-width modulation (M-SPWM), double-signal pulse-width modulation (DSPWM), and carrier-based pulse-width modulation (CB-PWM) techniques in terms of efficiency and DC bus balancing capabilities. The study examines the normalized voltage ripple and losses on the DC bus utilizing MATLAB/Simulink and PLECS. The simulation results indicate that DSPWM and CB-PWM hold promise as viable alternatives to the traditional M-SPWM technique for electric mobility applications, particularly when the power converter operates at high switching frequencies.