Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS

New power electronics switching devices based on wide band-gap materials are nowadays an emerging alternative to traditional silicon-based devices. The use of wide band-gap devices enables the reduction of power losses compared with using traditional silicon-based devices. Among the variety of wide band-gap materials available, Silicon Carbide (SiC) and Gallium Nitride (GaN) devices are the most commonly used due to their excellent properties and market availability. In this paper the power losses produced by the operation of GaN e-HEMT devices in a DAB Converter are explored. Additionally, the influence of modulation technique on the converter losses is analyzed and compared. The performance and losses of the mentioned semiconductor technology are acquired using MATLAB/Simulink and PLECS.