Performance Analysis of Si0.8Ge0.2 Double-Gate MOSFETs

The sole objective of the microelectronics industry nowadays is to accommodate many transistors on a single chip, particularly in the nanometer region which is done using scaling. Scaling has given rise to a significant problem in the form of short channel effects, which are visible as decrement in drive current and an increment in leakage current. To overcome them, we came across a double-gate configuration of MOSFET with Si0.8Ge0.2. simulation using the Cogenda Visual TCAD tool, analyzing the transfer input and output characteristics of Si0.8Ge0.2 double-gate N-MOSFET. From analysis, we investigate and estimate parameters DIBL, GIDL, MMCR, subthreshold slope, threshold voltage, and volume inversion since they are very helpful in determining the performance of configuration. From that, we get results in terms of Si0.8Ge0.2 as a channel material in double-gate configuration performing better in comparison to Si0.9Ge0.1 and existing Si as a channel material in double-gate configuration.