Heterogeneous 3-D Integration of GaAs- and InP-Based Electronic-Photonic Devices Onto Si Using Multilayer Adhesive Die-To Wafer Bonding for Photonic-Radio Frequency Applications

We introduce a novel approach to 3-D integration through adhesive two-layered die-to wafer bonding. This scalable technique allows for the precise integration of an InP-based photodiode (PD) and a GaAs-based Schottky diode (SD), achieving micrometer-scale alignment accuracy on a silicon-on-insulator (SOI) substrate. To validate the concept, we present a fully integrated photonic-electronic square law detector at 200 MHz in rectifying mode.