A Review of Degradation in GaN Based HEMTs

This work overviews primary degradation and failure modes in GaN based HEMTs. Relevant research results on gate degradation mechanism, hot electron/carrier effect, inverse piezoelectric effect, and trap-related effect on the performance of GaN HEMTs are displayed and discussed. It is concluded that trap plays a core role in various performance degradation, and a high electric field is one of the root causes of degradation. The technical improvement and structural experiment significantly reduce the degradation of GaN equipment and improve its reliability.