4H-SiC Schottky Barrier Diode Field Board Terminal Design

4H-SiC material is widely used in the field of power electronic devices due to its wide band gap and high critical electric field. In this paper, a 4H-SiC-based Schottky barrier diode (SBD) is designed with Sentaurus TCAD simulation software, and the peak surface electric field is reduced by using field-plate junction termination. The simulation results show that when the field plate length is set to 1.0μm, the insulating layer material is hafnium oxide (HfO2) and the thickness of the insulation layer is 0.3μm, the breakdown voltage of the device reaches a maximum value of 1308V, which is 2.63 times higher than that of a conventional Schottky barrier diode. This has important implications for the device preparation and structural parameter optimization.