High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes

In this work, we fabricated high-performance GaN-based ultraviolet resonant cavity light-emitting diodes (RCLEDs) with dual dielectric distributed Bragg reflectors (DBRs). The devices were configured a copper plate and AlN current confinement aperture, which improved thermal dissipation and increased the maximum output power density up to 84.03 W/cm2 at injected current density of ~36 kA/cm2. The emission wavelength of the devices is 376.7 nm and narrow cavity modes were observed with a linewidth of 0.24 nm, corresponding to a high quality factor (Q) of 1570.