One-Transistor One-Memristor Based Universal Oscillating Units for Spike-Encoding Artificial Sensory Neuron

In this work, we report a universal oscillating unit for spike-encoding artificial sensory neuron based on one InGaZnO transistor and one TaOX memristor. The high ION/IOFF ratio ( $\gt 10^{{8}}\text {)}$ of the transistor facilitates the spikes generation through the memristor with a wide frequency range of ~3 orders of magnitude (3-1667 Hz) and a low power consumption of 15.2 pJ/spike. More importantly, the unit operates at voltage mode, which makes it possible to integrate with various types of sensors. As a proof-of-concept, an artificial visual neuron is built based on such unit, which well simulates depth perception function. These results indicate that our device can be regarded as a building block for artificial sensory systems with high biofidelity.