Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation

In this study, quaternary InAlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) aimed for power applications were exposed to 800 krad of Co60 γ-ray, and their response to total dose effects was recorded. For the irradiation process, devices with five gate-connected field plate schemes of field plate length (without field plate, 2 μ m, 4, μ m, 6 μ m, 8 μ m) were tested under either a grounded state or a stressed state. It was discovered that the implementation of the field plate could successfully suppress the virtual gate phenomenon exacerbated by total dose effects. Post-irradiation analysis of the reverse characteristics also revealed that for devices irradiated under a stressed state, field plates could increase the device robustness against total dose effects impacting the electrical breakdown.