Physical Modeling for Micropattern-Trench IGBT and p-i-n Diode With Dynamic Control Lumped Charge

Due to the injection enhancement (IE) effect, the novel micropattern-trench (MPT) insulated gate bipolar transistor (IGBT) technique could accomplish a superior balance between the ON-state voltage drop and the switching loss. Nevertheless, modeling research regarding the MPT IGBT has yet been seldom conducted. When conventional models reliant on quasi-static assumptions are employed directly, the estimation of turn-off losses may be subject to substantial error. Thus, a novel physical paradigm for the MPT IGBT based on dynamic control lumped charge (DCLC) is introduced in this article. We newly propose a charge concentration expression for a MOS end region geometry-dependent charge concentration for an MPT structure that accounts for the dynamic 2-D excess carrier distribution. Meanwhile, a DCLC power diode model is established as a more accurate representation of the IGBT’s turn-on characteristic. On the assumption that device parameters are known, the carrier turn-off dynamic of the proposed IGBT model is validated through comparison with TCAD simulation. The precision of the suggested model is additionally validated through experiments that encompass both static and transient attributes.