High-Frequency Characterization of Space Vector Pulse-Width Modulated SiC MOSFET Three-Phase Inverters

Silicon carbide (SiC) high-frequency three-phase inverters are gaining increasing attention in the field of power electronics due to the growing demand for efficient energy conversion in renewable energy and industrial production. This paper focuses on studying the high-frequency characteristics of SiC MOSFET three-phase inverters employing space vector pulse width modulation (SVPWM), which enhances the power density of the inverter by elevating the switching frequency and reducing the total harmonic distortion of the output waveform. While a higher operating frequency increases inverter power loss, a comparative analysis of the switching characteristics and power loss of SiC MOSFETs and Si IGBT discrete devices through double-pulse tests reveals that SiC MOSFET inverters exhibit lower power loss and higher operating efficiency at high frequencies. Furthermore, this study explores the effects of switching frequency and load on the total harmonic distortion of the output waveform and the operating efficiency of the three-phase inverter. The results demonstrate that the operating efficiency of the SiC MOSFET inverter reaches 96.36% at an operating frequency of 100 kHz, substantiating its superiority in high-frequency inverter applications.