Challenges of SiC devices adopted in LCC resonant converters for high voltage X-ray generator applications

With development of wide-bandgap devices, SiC MOSFET has been widely used in resonant converters. Technical requirements of Silicon Carbide (SiC) based LCC resonant converters in high voltage X-ray generator applications are discussed from the aspects of improving its operating frequency, dynamic response and converter efficiency. Benefits of SiC devices adopted in LCC converters are overviewed and challenges in designs are listed for better utilization of SiC MOSFETs in high voltage X-ray generator applications.